发明名称 MANUFACTURE OF Mg-CONTAINING ITO SPUTTERING TARGET AND Mg-CONTAINING ITO EVAPORATION MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a method for stably manufacturing a Mg-containing ITO sputtering target and an evaporation material while preventing cracking during manufacture without causing reduction in yield. SOLUTION: The Mg-containing ITO sputtering target and evaporation material, consisting essentially of In, Sn, Mg and O, can be manufactured by mixing an indium oxide powder and a tin oxide powder or an indium oxide - tin oxide powder with a magnesium hydroxide powder, compacting and sintering the resultant powder mixture, and fabricating the resultant sintered compact.
申请公布号 JP2001098359(A) 申请公布日期 2001.04.10
申请号 JP19990270005 申请日期 1999.09.24
申请人 TOSOH CORP 发明人 TERAOKA HIDEKI;NAGASAKI YUICHI;KUROSAWA SATOSHI
分类号 C04B35/00;C04B35/495;C23C14/34 主分类号 C04B35/00
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