发明名称 |
METHOD OF PRODUCING Ge-Sb-Te SPUTTERING TARGET MATERIAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a Ge-Sb-Te sputtering target of a thin film medium for recording information by utilizing the phase transformation of a recording layer material. SOLUTION: In this method of producing a Ge-Sb-Te sputtering target material, an alloy powder containing Ge, Sb and Te and having tap density (relative density) of >=50% is allowed to flow into a die and is subjected to cold or warm compacting, and the compacted material whose density after the cold compacting is >=95% is sintered by being heated in Ar or vacuum atmosphere, by which the content of oxygen in the sintered body is controlled to <=700 ppm.
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申请公布号 |
JP2001098366(A) |
申请公布日期 |
2001.04.10 |
申请号 |
JP19990281924 |
申请日期 |
1999.10.01 |
申请人 |
SANYO SPECIAL STEEL CO LTD |
发明人 |
HASHIMOTO KAZUYA;YANAGIMOTO MASARU |
分类号 |
C22C1/04;B22F3/10;C23C14/34;(IPC1-7):C23C14/34 |
主分类号 |
C22C1/04 |
代理机构 |
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地址 |
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