发明名称 |
Monitoring of low currents through a low-side driver DMOS by modulating its internal resistance |
摘要 |
Relatively low currents are monitored through an integrated DMOS power transistor in a low-side driver configuration. A feedback circuit is responsive to the voltage applied to a gate of the DMOS power transistor to limit the minimum value to which the drain-source voltage may drop to keep it sufficiently high, and to allow a reliable monitoring of the current through the power transistor, even at relatively low levels. This is performed by increasing the conduction resistance of the power transistor at low current levels.
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申请公布号 |
US6215338(B1) |
申请公布日期 |
2001.04.10 |
申请号 |
US19990321141 |
申请日期 |
1999.05.27 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
GERVASI LUIGI;LECCE SERGIO;COCETTA FRANCO;MERLO MAURO |
分类号 |
G01R19/00;G01R31/02;(IPC1-7):H03B1/00;H03K3/00 |
主分类号 |
G01R19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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