| 摘要 |
This invention relates to a plasma generating apparatus having a plasma generating electrode, and improves the controllability of the etching selectivity and the etching shape. In a plasma processing apparatus, an electrode is located in a processing chamber. A plasma generating RF power is supplied from a plasma generating RF power supply to the electrode. A to-be-processed object W is mounted on a lower electrode located in the processing chamber. RF powers having their phases adjusted to predetermined values are applied to the plasma generating electrode and the lower electrode. RF powers of a continuous wave or RF power pulse trains can be used as the RF powers.
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