发明名称 PIEZOELECTRIC SINGLE CRYSTAL COMPOSITION AND ITS PIEZOELECTRIC SINGLE CRYSTAL WAFER
摘要 PROBLEM TO BE SOLVED: To obtain a crystal composition capable of sharply decreasing inclusion materials, foam and crack which are liable to be produced when growing a crystal without deteriorating the characteristics of a solid solution-based piezoelectric single crystal represented by the formula (Bi1/2, Na1/2)1-xAlx}TiO3, or the like, and readily providing the large-sized crystal. SOLUTION: This oxide single crystal composition comprises a compound comprising at least one kind of pentavalent element D (D=Nb or Ta) in the range represented by the formula 0<D<5 mol.%, in a piezoelectric single crystal composed of a complex perovskite oxide represented by the general formula (1) (Bi1/2, Na1/2)1-xAlx}TiO3 (0<=x<1; Al is at least one kind selected from Ba, Ca and Sr).
申请公布号 JP2001097799(A) 申请公布日期 2001.04.10
申请号 JP19990280659 申请日期 1999.09.30
申请人 TOSHIBA CORP 发明人 HOSONO YASUHARU;HARADA KOICHI;YAMASHITA YOHACHI;SAITO SHIRO
分类号 H01L41/187;C30B29/32;(IPC1-7):C30B29/32 主分类号 H01L41/187
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