| 摘要 |
A semiconductor device, which is characterized in that a trench (12) is formed in a silicon substrate (11), an element isolation film (1) is formed on an inner surface of said trench (12), and a drain region (7), a channel region (8) and a source region (9) are arranged vertically in a region encircled by said element isolation film (1); and that a gate insulating film (2) is formed inside of these regions (7, 8 and 9) and a gate electrode (4) is formed on an inner side portion of said gate insulating film (2), while a drain electrode (5) or source electrode (13) is formed on an outer side portion of said gate insulating film (2).
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