发明名称 METHOD FOR PRODUCING COMPLEX OXIDE
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a complex oxide by which the highly pure complex oxide can be produced by a low temperature process without being affected by the purity of a raw material. SOLUTION: This method for producing the complex oxide comprising immersing a first metal and a second metal having an ionization tendency smaller than that of the first metal in an aqueous solution containing at least one kind of an ion of a third metal and without containing the first or second metal to provide the objective complex oxide containing the first metal, and the third metal comprises electrically short-circuiting the first metal and the second metal. For example, mutually short-circuited Fe and Pt plates are immersed in an aqueous solution containing Zn(NO3)2 and the temperature of the aqueous solution is raised to 80 deg.C to elute Fe2+ ion, and to react Zn2+ ion in the solution with an acid and to provide ZnFe2O4.
申请公布号 JP2001097718(A) 申请公布日期 2001.04.10
申请号 JP19990277025 申请日期 1999.09.29
申请人 NGK INSULATORS LTD 发明人 FUJITA YASUSHI;KAKEHI KOJI;KANBARA SATORU;NAKAMURA TOMOAKI;KOJIMA TAKASHI;NUMANAMI AKISHI;IMAI TOSHIAKI
分类号 C01G49/00;C25B1/00;(IPC1-7):C01G49/00 主分类号 C01G49/00
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