发明名称 |
Chemical vapor deposition systems and methods for depositing films on semiconductor wafers |
摘要 |
The present disclosure relates to a chemical vapor deposition system including a chemical vapor deposition chamber, and a circlet wafer positioned within the chemical vapor deposition chamber. The circlet wafer is mounted on a rotatable member that at least partially extends through an opening of the wafer. A drive mechanism is used to rotate the rotatable member and the circlet wafer. The system also includes a gas injector for injecting reactive gases toward the circlet wafer. The present disclosure also relates to a chemical vapor deposition system including a chemical vapor deposition chamber, a wafer positioned within the chemical vapor deposition chamber, and a gas injector for injecting first and second reactive gases toward the wafer. The gas injector includes a mixing region for mixing the first and second reactive gases before the first and second reactive gases are discharged from the gas injector.
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申请公布号 |
US6214123(B1) |
申请公布日期 |
2001.04.10 |
申请号 |
US19980137902 |
申请日期 |
1998.08.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER MARK I.;GILMER MARK C.;PAIZ ROBERT |
分类号 |
C23C16/44;C23C16/455;C23C16/458;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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