发明名称 |
Method for planarizing a semiconductor substrate |
摘要 |
A method for planarizing a semiconductor substrate uses a difference in etch selectivity of insulators on the semiconductor substrate. The method comprises the steps of wet-etching the second and first insulating layers at upper edges of the elevated region until portions of the first insulating layer are exposed at the upper edges, forming a third insulating layer on the first and second insulating layers, and wet-etching the third and second insulating layers until an upper surface of the first insulating layer is exposed. During the wet-etching, the second insulating layer is etched faster than the third insulating layer. With this method, the semiconductor substrate has an even surface.
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申请公布号 |
US6214735(B1) |
申请公布日期 |
2001.04.10 |
申请号 |
US19980080874 |
申请日期 |
1998.05.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHANG-GYU;CHOI JI-HYUN;HONG SEOK-JI |
分类号 |
H01L21/3205;H01L21/3105;(IPC1-7):H01L21/311;H01L21/302;H01L21/461;H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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