| 摘要 |
PROBLEM TO BE SOLVED: To densify a thin film formed by a sputtering method. SOLUTION: In a state where a film deposition chamber 2 is grounded, a positive voltage and a negative voltage are alternately applied to a target holder 11 and a voltage being opposite in polarity to the voltage applied to the target holder 11 is applied to a substrate holder 9. When the negative voltage is applied to the target holder 11, Ar+ is allowed to sputter a target to deposit a thin film onto the surface of a substrate 10; when the negative voltage is applied to the substrate holder 9, Ar+ is allowed to sputter the surface of the substrate 10 to activate sputtered particles and densify the thin film. Accordingly, an ion assisted effect can be obtained without use of an ion source, and a thin film of high density can be deposited onto the surface of the substrate 10.
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