| 发明名称 |
Reduced leakage trench isolation |
| 摘要 |
Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
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| 申请公布号 |
US6215165(B1) |
申请公布日期 |
2001.04.10 |
| 申请号 |
US19990310423 |
申请日期 |
1999.05.12 |
| 申请人 |
INTEL CORPORATION |
发明人 |
CONNOLLY KEVIN M.;KANG JUNG S.;LANDAU BERNI W.;BREISCH JAMES E.;KAKIZAWA AKIRA;PARKS, JR. JOSEPH W.;BEILEY MARK A.;LI ZONG-FU;WEBER CORY E.;YU SHAOFENG |
| 分类号 |
H01L21/00;H01L21/329;H01L21/336;H01L21/76;H01L27/146;H01L31/00;H01L31/0232;H01L31/06;H01L31/103;(IPC1-7):H01L31/023 |
主分类号 |
H01L21/00 |
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