发明名称 Wafer level integrated circuit structure and method of manufacturing the same
摘要 A wafer level IC structure and a method of manufacturing this wafer level IC structure are proposed, which can help increase the yield of the IC manufacture. The wafer level IC structure is constructed on a semiconductor wafer which is defined into a plurality of discrete IC blocks on the wafer, each IC block being used to form a plurality of IC components such as memory cells. A multi-layer interconnect structure is formed to electrically interconnect these IC components in each of the IC blocks. A first testing and repair process is then perform to disconnect any inoperative IC components from active use. This completes the fabrication stage of the manufacture process. In the subsequent packaging stage, a redistribution line structure is formed to interconnect the discrete IC blocks into an integral functional unit. A second testing and repair process is then perform to disconnect any inoperative IC blocks from active use. The overall IC manufacture would have an increased yield as compared to the prior art.
申请公布号 US6214630(B1) 申请公布日期 2001.04.10
申请号 US19990471059 申请日期 1999.12.22
申请人 UNITED MICROELECTRONICS CORP. 发明人 HSUAN MIN-CHIH;FENG TAISHENG;HAN CHARLIE
分类号 G01R31/3185;H01L21/66;H01L23/525;(IPC1-7):H01L21/00;H01L21/82;H01L21/326;H01L21/44;G01R31/26 主分类号 G01R31/3185
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