| 摘要 |
A device for generating light with the aid of a semiconducting material consisting of two electrically conducting contact layers and at least one layer, arranged therebetween, of semiconducting material which comprises a light-emitting semiconducting layer which is divided into at least two permanently parallel-connected sub-regions, delimited by semiconducting material with a higher energy gap than the light-emitting layer or delimited by ion-implanted semiconducting material, wherein the delimiting material shall prevent the propagation of dislocations between the sub-regions.
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