摘要 |
A memory device is disclosed, in which the operation of selecting the next line and relevant column addresses is unnecessary, thereby improving the data-writing/reading speed in comparison with the conventional DRAM. The memory device comprises a memory cell comprising at least two banks; and a line-address counting section for making a designated line of one of the banks active, wherein before reading or writing operation of data of the designated line is finished, the line-address counting section makes the next designated line of another bank active.
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