| 摘要 |
An etching method can restrict side etching (corrosion) of an AlCu film as an upper layer upon etching of a TiN film as a lower layer. The etching method is characterized by, upon etching of a stacked film of AlCu film/TiN film with taking an oxide film as a mask, as a gas for performing etching of TiN film on a lower layer, a compound gas containing a chlorine atom is used, and using a mixture gas of the etching gas and an additive gas and not using a Cl2, a corrosion resistance of AlCu film against the etching gas can be improved.
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