| 摘要 |
A method of producing a silicon aluminum sputtering target is provided. The target is formed from a powder base of between about 80% to about 95% by weight silicon and about 5% to about 20% by weight aluminum which is placed in a containment unit, heated under vacuum and then sealed. The base is then subjected to a pressure greater than about 3000 psi and heated to a temperature between about 1076° F. and about 1652° F. such that some, but not more than 30%, of the resulting target is formed from liquid phase silicon-aluminum.
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