发明名称 |
Semiconductor laser diode with a distributed reflector |
摘要 |
A single longitudinal mode laser has a 2D-lattice wavelength selective grating. The device exhibits mode-hop-free operation across its entire current operating range. Its structure has the form of a modified edge emitting Fabry-Perot laser diode. It is envisaged that extensions of this device could allow the manufacture of low-cost transceiver modules for use in next generation data-communications. The laser is an InGaAsP-InP device comprising seven strained quantum wells. The grating is formed by etching hexagonal arrays of holes on each side of the ridge. |
申请公布号 |
AU7028000(A) |
申请公布日期 |
2001.04.10 |
申请号 |
AU20000070280 |
申请日期 |
2000.09.08 |
申请人 |
UNIVERSITY OF BRISTOL |
发明人 |
AENEAS BENEDICT MASSARA;LAURENCE, JOHN SARGENT;RICHARD VINCENT PENTY;IAN HUGH WHITE |
分类号 |
H01S5/12;H01S5/125;H01S5/22 |
主分类号 |
H01S5/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|