Structure of a channel write/erase flash memory cell and manufacturing method and operating method thereof

摘要

A channel write/erase flash memory cell structure together with its method of manufacture and mode of operation. The flash memory cell structure is formed by implanting P-type ions into a substrate to form a shallow-doped region, and then implanting N-type ions to form the drain terminal of the flash memory cell. Next, a deep-doped region that acts as a P-well is formed underneath the drain terminal. Method of manufacturing the channel write/erase memory cell and its mode of operation is also discussed.