| 摘要 |
PURPOSE: A boost voltage generator within a semiconductor memory device is provided to regulate boost capability, so consumption power is minimized. CONSTITUTION: The generator includes a voltage level detector(22), a pulse generator(24) and a pumping part(26). The voltage level detector(22) generates a drive signal according to level of boost voltage(VPP). The pulse generator(24) generates a periodical vibration signal(VOSC) according to the drive signal(VOSC). The pumping part(26) boosts level of the boost voltage(VPP). The pumping part(26) includes pumping capacitors(27a,27b) and a diode(29). Only the first pumping capacitor(27a) operates in the first mode. Both the first and second pumping capacitors(27a,27b) operate in the second mode. Thereby, regulate the boost capability can be regulated so that the consumption power is minimized.
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