BIPOLAR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a bipolar device is to provide a high speed processing capacity, by minimizing parasitic junction capacitance between a collector and a base and base parasitic resistance. CONSTITUTION: A collector is formed with a semiconductor material of the first conductivity type. A base thin film is formed on the collector with a semiconductor material of the second conductivity type. The first base semiconductor electrode out of the base thin film is exposed, and a masking layer covering a base active region is formed. The second base semiconductor electrode is formed on the first base semiconductor electrode by a selective epitaxial growth(SEG) method. A base ohmic electrode including silicide is formed by sputtering metal on the second base semiconductor electrode.