| 摘要 |
PROBLEM TO BE SOLVED: To improve the EM resistance of Al wiring. SOLUTION: A Cu film 5 is formed on an Al film 3 which is formed as Al wiring. Then the Cu in the Cu film 5 is diffused in the Al film 3 and, in addition, a Cu-Al eutectic state is formed in the Al film 3 through heat treatment. Thereafter, the heat treatment is terminated and diffusion barrier layers 6 composed of CuAl2 are formed at all grain boundaries 4 in the Al film 3 by lowering the temperature of the Al film 3.
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