| 摘要 |
PROBLEM TO BE SOLVED: To improve work fluctuations due to decrease in the temperature of a silicon wafer in the initial stage of treatment in a semiconductor manufacturing device, such as dry etching using plasma discharge. SOLUTION: The temperature of a lower electrode 4 close to a plasma temperature is measured directly by a thermocouple 14 embedded in the lower electrode 4, and the temperature of the fluid of a circulator 11b is controlled according to the change of the temperature. The circulator is constituted of a primary circulator 12, whose heat capacity is small and a secondary circulator 13 whose heat capacity is large, and the temperature of the fluid can be controlled quickly by the primary circulator 12 whose heat capacity is small. Thus, the temperature in the initial stage of treatment can be held quickly so as to be a prescribed value, and work fluctuation can be reduced.
|
