ORGANIC IRREGULAR REFLECTION PREVENTING FILM COMPOSITION AND PROCESS FOR PRODUCING SAME

摘要

PURPOSE: An irregular reflection preventing film composition capable of preventing irregular reflection in a lower film layer of a photoresist film in a process for forming an ultrafine pattern using ArF (193nm) light source during the production of a semiconductor and process for preparation thereof are provided which can produce a semiconductor element capable of remarkably reducing standing wave effect and having an excellent pattern form. CONSTITUTION: This irregular reflection preventing film composition comprises a cross-linking agent of formula 11 having a molecular weight of 4,000 to 12,000, an organic irregular reflection preventing base material of formula 12, a light absorbing agent, a thermal acid generator and an organic solvent. In formula, a : b is 0.1 to 1.0 : 0.1 to 1.0, R1 is H or methyl, R1, R2 are side chain or main chain substituted alkyl containing 1 to 5C, R3 is side chain or main chain substituted alkyl containing 1 to 5C.