METHOD FOR INSPECTING WAFER SURFACE

摘要

PURPOSE: A wafer surface inspection method is provided to in-situ monitor in a semiconductor element producing process, and to detect COP(Crystal Originated Particle) and particles on a wafer promptly and precisely. CONSTITUTION: A wafer inspection device having plural dark field detectors decides kind of the defect as no particle in case of the measured defect size on a wafer to be under the maximum size of COP. The defect is decided as no particle if the correlation between plural output defect size values according to quantity of light detected from plural dark field detectors is content with the reference condition. The wafer inspection device decides the defect as no particle in case of the position of the measured defect to be within a vacancy-rich area. The defect is decided as COP in case of satisfying the three conditions.