发明名称 PLASMA TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a low-cost plasma treatment device with a structure capable of sealing plasma in a prescribed region evenly, without preventing gas emission. SOLUTION: In this plasma treatment device, a substrate 8 is held on a suscepter 6 inside a vacuum case 1, a treatment gas is fed to the treatment surface of the substrate 8 from a gas inlet part 2, high-frequency waves are applied to the treatment gas by way of an electrode 3 to generate a plasma, a prescribed plasma treatment is applied to the treatment surface of the substrate 8, and the gas after the plasma treatment is emitted from the periphery of the suscepter 6 to the outside of the vacuum case 1 through a gas emitting part 7. The plasma treatment device has magnets 11 and 12 around the suscepter 6 for sealing the plasma 9 in the space for the plasma treatment with a gas passage secured.
申请公布号 JP2001093699(A) 申请公布日期 2001.04.06
申请号 JP19990268240 申请日期 1999.09.22
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ISHII AKINORI
分类号 H01L21/302;C23C16/505;H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/302
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