摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for etching a material layer to be used for the manufacture of a microstructure and a method of forming a lithography mask. SOLUTION: In a method for etching a material layer, a carbon layer is formed on at least one part of the material layer so that the part of the material layer can be protected from etching. The material layer is etched in alkali solution. In the manufacture of a lithography mask, an etched layer, a membrane layer, a lithography mask layer, and a protecting layer are successively formed on one face of a substrate. Afterwards, an etching mask for selectively exposing the other face of the substrate opposite to one face of the substrate is formed of a carbon layer on the other face of the substrate. Then, the alkalne solution is introduced to the other face of the substrate exposed by the etching mask, and the substrate is etched, and the membrane layer is exposed.</p> |