HALBLEITERELEMENT MIT EINER SCHWACH DOTIERTEN SILIZIUM-SCHICHT MIT EINER PIN-DIODENSTRUKTUR

摘要

A prior art semiconductor component representing a pin photodiode has a waffle-like structure in that a p region is arranged above and an n region below an intrinsic zone. A photo-current may be obtained depending on the incident light via a metal contact outside the p and n region. In order to develop a semiconductor component with a pin diode structure further into an electro-optical modulator, the pin diode structure is formed from two separate regions (4, 5) with different doping extending from the same side (3) of the silicon layer (1) and there is an optical waveguide (2) in the intrinsic zone between the regions (4, 5). The semiconductor component can be used as an electro-optical modulator.