| 摘要 |
PURPOSE: A circuit for detecting the temperature of an integrated circuit is provided to detect a variation in the inner temperature of the integrated circuit by using a bipolar transistor and resistor to prevent erroneous operation of the integrated circuit. CONSTITUTION: The circuit includes a bias voltage generating circuit(100) and a temperature detecting circuit(200). The bias voltage generating circuit provides a bias voltage having a constant level without regard to a variation in power voltage to a discharge circuit(220). The temperature detecting circuit includes a current source(210), the discharge circuit and a detection signal generating circuit(230). The current source delivers the first current and the second current from the power voltage to the discharge circuit under the control of the bias voltage. The discharge circuit has MOS transistors, a bipolar transistor and a resistor, and controls the discharging amount of the first and second currents which are discharged to ground voltage through the bipolar transistor and the resistor according to a temperature variation, to thereby sense the temperature change. The detection signal generating circuit generates a temperature detection signal informing the temperature change according to the discharging amount of the first and second currents that is varied with the temperature variation. |
