发明名称 DEVICE AND METHOD FOR CONTROLLING FLOW OF PROCESS MATERIAL INTO DEPOSITION CHAMBER
摘要 PURPOSE: To improve the control of a flow of a process material to a deposition system without adding complication by arranging an injection valve communicating a fluid at a deposition chamber. CONSTITUTION: A precursory material such as liquid Cuproselect (Registered) is supplied to an injection vaporizer(210) from a process material source such as an ampoule(232). The injection vaporizer(210) is provided with a liquid injection valve of solenoid driving, an inlet of the precursory material, an evaporator and a gas£B|port of carrier gas£B|supplied from a carrier gas source(242). It is arranged closely to a chamber(200) and is communicated with a shower head(208) arranged therein. The injection evaporator(210) controls the flow of a mixture of the precursory material-carrier gas to the chamber(200), atomizes the liquid precursory material into fine mist and evaporates it. By the arrangement of the injection evaporator(210) closer to the chamber, there is no need of moving the generated vapor over the long distance, the plating and clogging of a moving duct line are reduced, and moreover, the possibility of a pressure gradient is reduced.
申请公布号 KR20010029580(A) 申请公布日期 2001.04.06
申请号 KR20000010680 申请日期 2000.03.03
申请人 APPLIED MATERIALS INC. 发明人 JAMES J. CHAN;KEITH K. KOAI;MARK S. JOHNSON;SCHMIDT JOHN;SHEEN LEE;TSENG TUNG-CHING
分类号 C23C16/455;C23C16/00;C23C16/44;C23C16/448;C23C16/52;H01L21/205;H01L21/285;(IPC1-7):C30B25/16 主分类号 C23C16/455
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