| 摘要 |
PURPOSE: A method for manufacturing a highly integrated ferroelectric memory device is provided to prevent a capacitor under a photoresist layer from being damaged by over-etching of the photoresist layer, by forming a sidewall anti-oxidizing layer after patterning a part of a storage electrode so that the quantity of the storage electrode to be etched in a subsequent etching process is reduced. CONSTITUTION: An interlayer dielectric including a contact plug(114) is formed on a semiconductor substrate(100). The first storage electrode pattern electrically connected to the contact plug is formed on the interlayer dielectric, defining a sidewall and an upper surface. An anti-oxidizing layer is formed on the sidewall of the first storage electrode pattern. The second storage electrode layer, a ferroelectric layer and a plate electrode layer are sequentially formed on the interlayer dielectric including the sidewall anti-oxidizing layer(120a) and the first storage electrode pattern. The plate electrode layer, the ferroeelctric layer and the second storage electrode layer are etched to form a plate electrode pattern, a ferroelectric layer pattern and the second storage electrode pattern. The first and second storage electrode patterns, the ferroelectric layer pattern and the plate electrode pattern define a ferroelectric capacitor.
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