METHOD FOR ETCHING METAL LAYER USING HIGH-DENSITY PLASMA ETCHING EQUIPMENT

摘要

PURPOSE: A method for etching a metal layer using a high-density plasma etching is provided to prevent particles from being generated in a process chamber, by performing an etch process on a condition of proper radio frequency(RF) power, suitable density of etching gas and temperature. CONSTITUTION: An etch process for etching a metal layer is performed on a condition that radio frequency(RF) power of a high-density plasma etching equipment is not less than 1200 Watt. The etch process is performed on a condition that a density of BCl3 is not lower than 25 percent of the entire etching gas. The etch process is carried out at a temperature not lower than 20 deg.C.