| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be operated at high speed. SOLUTION: This semiconductor device is provided with lightly-doped regions 3a and 3b, a gate electrode 7a that is formed via a gate oxide film 6a, an etching stopper 8a, an interlayer insulation film 10 that has contact holes 11a and 11b and has an etching rate larger than that of the etching stopper 8a, heavily-doped regions 4a and 4b that are formed by injecting an impurity to a silicon substrate 1 via the contact holes 11a and 11b, plugs 12a and 12b for embedding the contact holes 11a and 11b, and wiring layers 13a and 13b. |
