| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which avalanche resistance and ESD resistance can be enhanced without increasing the ON resistance. SOLUTION: An n++-type drain region 4 is formed in comb shape, in plan view, and surrounded by an n-type semiconductor layer 3, a p+-type well region 5, an n++-type source region 6, and a p++-type base contact region 7. A body contact region 12 is formed selectively at such a part as the p+-type well region 5 projects, in plan view, to the n++-type drain region 4. A body contact diode region 13 constituting a diode structure where the body contact region 12 and the n-type semiconductor layer 3 form a pn junction, and an MOSFET region 14 where MOSFET structure is formed are also provided. Breakdown strength of the body contact diode region 13 is set lower than that of the MOSFET region 14.
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