METHOD FOR MANUFACTURING GATE INSULATING LAYER HAVING DUAL THICKNESSES IN PROCESS FOR FORMING TRANSISTOR

摘要

PURPOSE: A method for manufacturing a gate insulating layer having dual thicknesses in a process for forming a transistor is provided to improve capacity of a semiconductor device, by minimizing variation of distribution of impurities implanted into a substrate before the gate insulating layer is formed, and by guaranteeing reliability of the gate insulating layer. CONSTITUTION: The first material layer is formed on a substrate(40). A part of the first material layer is eliminated. The second material layer covering the first material layer of which a part is eliminated is formed on the substrate. At least one of the first material layer or second material layer is formed by an atomic layer deposition(ALD) method.