| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to decrease sheet resistance of a gate by increasing a surface area of a polycide gate, and to reduce a grain size of metal silicide by using amorphous silicon. CONSTITUTION: After a gate oxide layer(12) and a polysilicon gate are formed on a semiconductor substrate(11), an oxide layer(14) is formed. After a nitride spacer(15) is formed on a sidewall of the polysilicon gate, a source/drain junction is formed. A predetermined thickness of the polysilicon gate is etched by a poly etching process to form a recess, and polysilicon residue(13a) is left. An amorphous spacer is formed in the recess portion inside the nitride spacer. A refractory metal layer is deposited on the entire structure including the amorphous silicon spacer, and an annealing process is performed to form a metal silicide layer(78). The unreacted refractory metal layer is eliminated, and a polycide gate(100) composed of the polysilicon residue and the metal silicide layer on the polysilicon residue is formed.
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