CIRCUIT AND METHOD FOR GENERATING ROW REDUNDANCY ENABLE SIGNAL OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A circuit and a method for generating a row redundancy enable signal of a semiconductor memory device are provided to reduce a test cost because a multi row address disturb test is capable of being applied irrespective of a redundancy method or repair or not as inactivating a row redundancy enable signal when the multi row address disturb test is operated. CONSTITUTION: The circuit includes a repair signal generating portion(10), a test enable signal generating portion(20), and a row redundancy enable portion(30). The repair signal generating portion generates a repair signal when a defect row cell array of a normal memory block is replaced with a row redundancy block. The test enable signal generating portion outputs a test enable signal for a multi row address disturb testing operation in response to a mode register set address. The row redundancy enable portion generates a row redundancy enable signal which is inactivated in response to the test enable signal when a normal block is tested and activated in response to a row redundancy word line enable signal when a row redundancy block is tested in the multi row address disturb test operation mode and then activated in response to the repair signal in a normal operation mode.