Hardening spin-on-glass planarising films on semiconductor wafer - by combined heating and UV exposure eliminating formation of fissures

摘要

Process for hardening a spin on glass (SOG) film formed on a wafer film to insulate the metal layers from each other and to even out the step height difference in the prodn. of a multilayer metal layer of a highly integrated semiconductor device, comprises adjusting a heating chamber which has a source of UV light to a predetermined initial temp.; introducing a wafer carrying a spin on glass film to be hardened into the heated chamber and raising the temp. gradually to a predetermined max temp.; irradiating the SOG film with UV light of a predetermined wavelength while the max. temp. is maintained for a predetermined period; and cooling the wafer.