| 摘要 |
PURPOSE: A method for forming a butting contact of a semiconductor device is provided to avoid a misalignment or a contact fail of the butting contact. CONSTITUTION: In the method, a gate electrode(22) is formed on a semiconductor substrate(21), and a nitride spacer(22a) is formed on a side of the gate electrode(22). A titanium layer(23) is then formed on an entire surface, and a photoresist pattern(24) is formed thereon to define the butting contact. Thereafter, silicon ions are implanted onto the titanium layer(23) through the photoresist pattern(24). Next, after removing the photoresist pattern(24), the first heat process is performed. Therefore, a titanium silicide layer(25) and a non-reactive remaining titanium or titanium nitride layer(26) are formed. The remaining titanium or titanium nitride layer(26) is then removed, and the second heat process is performed. The titanium silicide layer(25) is therefore changed in phase into another titanium silicide layer(25a). Then, after an interlayer dielectric layer(27) having contact holes is formed, a tungsten plug(28) for the butting contact is formed in the contact hole together with normal tungsten plugs(29). Here, the tungsten plug(28) is prevented from the contact fail by a bridge of the titanium silicide layer(25).
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