METHOD FOR BURYING GAP BY OXIDE LAYER

摘要

PURPOSE: A method for burying a gap by an oxide layer is to provide a good gap filling of an oxide layer while controlling generation of a void, by making the oxide layer deposited on a bottom of the gap but not deposited on a side of the gap. CONSTITUTION: Direct current(DC) power is applied to a sputtering target made of a silicon material. Radio frequency(RF) power only or RF power and DC power together is applied to a heater block on which a substrate(100) is mounted and to a coil of a silicon material between the targets. Alternate current(AC) power is applied to the heater block.