发明名称 COMPOSITION OF RESIST STRIPPING AGENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a resist stripping agent compound with satisfactory characteristics in exfoliating a remainder of resist generated by etching or ashing under severe conditions. SOLUTION: A resist striping agent compound comprises an amine compound and at least one kind of aldehyde compound chosen from formaldehyde, paraformaldehyde, acetaldehyde, para-aldehyde group, and a chelate agent.
申请公布号 JP2001093826(A) 申请公布日期 2001.04.06
申请号 JP19990272811 申请日期 1999.09.27
申请人 MITSUBISHI GAS CHEM CO INC 发明人 IKEMOTO KAZUTO;ABE KOJIRO;MARUYAMA TAKEHITO;AOYAMA TETSUO
分类号 H01L21/306;G03F7/42;H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/306
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