发明名称 |
COMPOSITION OF RESIST STRIPPING AGENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a resist stripping agent compound with satisfactory characteristics in exfoliating a remainder of resist generated by etching or ashing under severe conditions. SOLUTION: A resist striping agent compound comprises an amine compound and at least one kind of aldehyde compound chosen from formaldehyde, paraformaldehyde, acetaldehyde, para-aldehyde group, and a chelate agent. |
申请公布号 |
JP2001093826(A) |
申请公布日期 |
2001.04.06 |
申请号 |
JP19990272811 |
申请日期 |
1999.09.27 |
申请人 |
MITSUBISHI GAS CHEM CO INC |
发明人 |
IKEMOTO KAZUTO;ABE KOJIRO;MARUYAMA TAKEHITO;AOYAMA TETSUO |
分类号 |
H01L21/306;G03F7/42;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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