发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To remove a photoresist film without damaging an insulating film containing organic components. SOLUTION: A photoresist film 14b is formed on an insulating film 13 containing organic components as a mask for etching the unwanted potions of the insulating film 13. In order to remove the photoresist film 14b after the unwanted portions of the insulating film 13 are etched by using the photoresist film 14b as the mask, the photoresist film 14b is removed by using an adhesive sheet 16 so as not to give damages to the insulating film 13. |
申请公布号 |
JP2001093805(A) |
申请公布日期 |
2001.04.06 |
申请号 |
JP19990265168 |
申请日期 |
1999.09.20 |
申请人 |
HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD;NITTO DENKO CORP |
发明人 |
TOKUNAGA TAKAFUMI;MAEKAWA ATSUSHI;TERADA YOSHIO;NAMIKAWA AKIRA;TOYODA HIDESHI |
分类号 |
H01L21/027;G03F7/42;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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