发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To remove a photoresist film without damaging an insulating film containing organic components. SOLUTION: A photoresist film 14b is formed on an insulating film 13 containing organic components as a mask for etching the unwanted potions of the insulating film 13. In order to remove the photoresist film 14b after the unwanted portions of the insulating film 13 are etched by using the photoresist film 14b as the mask, the photoresist film 14b is removed by using an adhesive sheet 16 so as not to give damages to the insulating film 13.
申请公布号 JP2001093805(A) 申请公布日期 2001.04.06
申请号 JP19990265168 申请日期 1999.09.20
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD;NITTO DENKO CORP 发明人 TOKUNAGA TAKAFUMI;MAEKAWA ATSUSHI;TERADA YOSHIO;NAMIKAWA AKIRA;TOYODA HIDESHI
分类号 H01L21/027;G03F7/42;(IPC1-7):H01L21/027 主分类号 H01L21/027
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