| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a gate for preventing the deterioration of a gate insulating film, and for preventing the etching of a semiconductor substrate by using a film with carbon as main components, and using a dry etching method for patterning. SOLUTION: At formation a gate and gate wiring at a semiconductor substrate, a film 4 with carbon as main components is formed on an insulating film 3 formed on a semiconductor substrate 1. A prescribed mask 6 is formed on the film 4, and the film 4 is worked and a pattern is formed. The film 4 is etched by dry etching using gas which does not contain halogens such as oxygen, nitrogen, carbon monoxide, and argon or the mixed gas. This etching is selectively stopped by the insulating film 3. The insulating film 3, such as SiO2, is etched by dry etching using gas which contains halogen, and the etching is hardly progressed in the dry etching using the gas which does not contain halogens.
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