摘要 |
PROBLEM TO BE SOLVED: To provide a device and method for manufacturing a semiconductor for properly controlling oxidation reaction by secularly tracing the progress level of the oxidation reaction with respect to aging changes. SOLUTION: A semiconductor precursor 12 in an oxidizing furnace 10 is irradiated with a light from a white light source 14, reflected light from the semiconductor precursor 12 during oxidation reaction is detected by a reflected light detecting means 16, and reflectivity, mean reflectivity, rate of change of the reflectivity, or rate of change of the mean reflectivity is calculated by a computer 18 based on the detected reflected lights, and the calculation result is displayed at a monitor 20. Also, the oxidation reaction is controlled based on the calculation result, and one part of the region capable of oxidizing the semiconductor precursor 12 is selectively oxidized and a semiconductor can be manufactured.
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