发明名称 DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a device and method for manufacturing a semiconductor for properly controlling oxidation reaction by secularly tracing the progress level of the oxidation reaction with respect to aging changes. SOLUTION: A semiconductor precursor 12 in an oxidizing furnace 10 is irradiated with a light from a white light source 14, reflected light from the semiconductor precursor 12 during oxidation reaction is detected by a reflected light detecting means 16, and reflectivity, mean reflectivity, rate of change of the reflectivity, or rate of change of the mean reflectivity is calculated by a computer 18 based on the detected reflected lights, and the calculation result is displayed at a monitor 20. Also, the oxidation reaction is controlled based on the calculation result, and one part of the region capable of oxidizing the semiconductor precursor 12 is selectively oxidized and a semiconductor can be manufactured.
申请公布号 JP2001093897(A) 申请公布日期 2001.04.06
申请号 JP19990272559 申请日期 1999.09.27
申请人 FUJI XEROX CO LTD 发明人 NAKAYAMA HIDEO;SAKAMOTO AKIRA
分类号 H01L21/31;H01L21/66;H01S5/183;(IPC1-7):H01L21/31 主分类号 H01L21/31
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