| 摘要 |
PURPOSE: A method for forming a capacitor using a tantalum oxide dielectric in a semiconductor device is provided to increase capacitance by using a cobalt silicide as a storage electrode. CONSTITUTION: After forming a semiconductor device in a semiconductor substrate(11), an interlayer dielectric layer(13) is formed thereon. Then, a contact hole(15) for the storage electrode is formed in the interlayer dielectric layer(13) and filled with a doped polysilicon(16). After the doped polysilicon(16) is patterned, another doped polysilicon(17) is deposited thereon and patterned to form a spacer. Thereafter, a cobalt layer is deposited on the doped polysilicons(16,17) and heat-treated. Therefore, the cobalt silicide layer(19') is formed by a reaction with the doped polysilicons(16,17) and the cobalt layer. In addition, a surface of the cobalt silicide layer(19') is agglomerated, so that a surface area of the storage electrode is increased. After that, a nitride diffusion barrier(20), the tantalum oxide dielectric(21), and a plate electrode(23) are sequentially formed thereon.
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