| 摘要 |
PURPOSE: A method for forming a metal contact of a semiconductor device is provided to prevent a cut of a barrier metal layer and a failure of the metal contact due to a bad profile of a contact opening. CONSTITUTION: In the method, at least two interlayer dielectric layers(200,300) having different etch rates are formed on a semiconductor substrate(100) having a contact region(100a) therein and then dry-etched to form the contact opening exposing the contact region(100a) in the substrate(100). Thereafter, a spacer(500) is formed on a sidewall of the contact opening to protect the interlayer dielectric layers(200,300) during the following wet-etching process. The wet-etching process is then performed to remove a natural oxide layer in the contact opening. After that, the barrier metal layer(600) is formed on resultant entire surfaces, and then a metal layer(700) for the metal contact is deposited enough to fill the contact opening.
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