METHOD FOR MANUFACTURING INTERCONNECTION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an interconnection layer of a semiconductor device is provided to prevent a hillock caused by stress of an interlayer dielectric from being generated on a metal layer or between upper and lower metal layers, by evaporating a thin flexible insulating layer before depositing the interlayer dielectric filling a gap between lower metal layer patterns. CONSTITUTION: A lower interconnection layer(24) is formed on an insulating layer(22). The first flexible insulating layer is deposited on the resultant structure. The second insulating layer for filling a gap of the lower interconnection layer is formed on the first insulating layer. The first and second insulating layers are etched to expose the lower interconnection layer. A metal layer is deposited on the resultant structure to form an upper interconnection layer(30) connected to the lower interconnection layer.