| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent increment of access time due to larger memory capacity. CONSTITUTION: The device includes plural memory banks(A-BANK,A-BANK,A-BANK,A-BANK). In each memory bank(A-BANK,A-BANK,A-BANK,A-BANK), plural memory cells are arranged along row and column directions. A memory area of each memory bank(A-BANK,A-BANK,A-BANK, A-BANK) is divided into a dynamic memory-cell array area(102) and a static memory-cell array area(104). Memory cells to be selected by external addresses are located in the static memory-cell array area(104). Memory cells to be selected by internal addresses are located in the dynamic memory-cell array area(102). Thereby, increment of access time due to larger memory capacity can be prevented.
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