| 摘要 |
PURPOSE: A semiconductor device is provided to improve a planarization characteristic in a subsequent process by forming a gate electrode in a groove formed in a predetermined depth of a semiconductor substrate, and to reduce a short channel effect by making the gate electrode separated from a source/drain region by a predetermined width. CONSTITUTION: A sidewall contacts both sidewalls of a groove formed by selectively etching a semiconductor substrate(21), and is exposed to an upper surface of the semiconductor substrate. An insulating layer(27) is formed on the groove, contacting the sidewall. A conductive layer is formed to have the same height as the sidewall, adjacent to the sidewall and formed on the insulating layer. The first impurity layer(24) is formed in the semiconductor substrate on both sides of the sidewall, separated from the sidewall by a predetermined width. The second impurity layer(30) is formed in the substrate under the sidewall, adjacent to the first impurity layer.
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