| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve a profile in a process for etching an n-type gate electrode and to control performance variation of an n-channel metal-oxide-semiconductor(NMOS) transistor, by forming an excessively-doped phosphosilicate glass(PSG) layer on a polysilicon layer before patterning the n-type gate electrode to perform a diffusion process. CONSTITUTION: After an isolating layer(12) is formed on a semiconductor substrate(11), impurities different from each other are implanted into the semiconductor substrate to form an n-type well region and a p-type well region. After a gate oxide layer(13), a polysilicon layer(14) and an excessively-doped phosphosilicate glass(PSG) layer are sequentially formed on the entire surface, a mask process and an etch process are performed so that the excessively-doped PSG layer is formed only on the p-well region. After a heat treatment is performed to diffuse the excessively-doped PSG layer, a patterning is carried out to form an undoped gate electrode(18) and an n-type doped gate electrode(19) on the n-well and p-well regions, respectively.
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