| 摘要 |
PURPOSE: A sputtering equipment for depositing metal is provided to control a lifting phenomenon of a collimator and to prevent a particle from being generated inside a chamber, by preventing the collimator from being transformed by a difference of thermal stress between the center portion of the collimator and an outer portion of the collimator. CONSTITUTION: A chamber(11) has a gas inlet and a gas outlet. A wafer is mounted on a substrate which is installed in a lower portion inside the chamber. A metal target is installed in an upper portion inside the chamber, composed of metal to evaporate. A ratio frequency(RF) power supply unit supplies RF power to the metal target. A supporting unit(19) is fixed on an inner wall of the chamber, projected by a right angle to the inner wall of the chamber. A core ring(21) is installed on the supporting unit, having an opening in its center and a groove inside. An edge of a collimator(18) contacts the groove formed in the core ring, wherein the collimator is so formed that charged metal ions(20) can move toward the wafer through a plurality of holes formed in the center of the collimator.
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